PART |
Description |
Maker |
IDH20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW12G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
MA2J728 MA728 |
Schottky Barrier Diodes (SBD) Silicon Epitaxial Planar Type Schottky Barrier Diodes From old datasheet system
|
Matsshita / Panasonic Mitsubishi
|
MA2HD07 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD) Schottky Barrier Diodes (SBD) From old datasheet system
|
PANASONIC[Panasonic Semiconductor]
|
SCS206AJ-17 |
SiC Schottky Barrier Diode
|
Rohm
|
SCS106AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
SCS302AP |
SiC Schottky Barrier Diode
|
Rohm
|